WIDE BANDGAP SEMI-CONDUCTOR INVERTER DESIGN (GAN/SIC)

Highly efficient and compact power electronic systems are required due to the rapid increase in the world's electricity demand, which is fueled by industrial growth, the integration of renewable energy sources, and electric mobility. Despite being widely u tilized, conventional silicon (Si) - based inverters have intrinsic drawbacks include significant switching losses, limited high-frequency operation, and subpar thermal performance. Particularly in high-power and challenging working situations, these limitat ions result in decreased efficiency, large passive components, and difficulties with thermal control. Wide Bandgap (WBG) semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN) have emerged as viable solutions to these problems because of their superior electrical and thermal properties. This study utilizes advanced WBG semiconductor devices, specifically SiC MOSFETs and GaN HEMTs, for inverter design and analysis. Simulation and modeling are carried out using power electronic design to ols to evaluate performance parameters such as switching losses, conduction losses, efficiency, and thermal characteristics. A comparative analysis is performed between conventional Si-based inverters and WBG-based inverters under identical operating condi tions. High-frequency switching techniques are implemented to analyze the impact on passive component size reduction and overall system compactness. The proposed work focuses on designing and implementing a high-efficient inverter using GaN and SiC compon ents that can function at high switching frequencies. The technology seeks to greatly lower switching losses and increase power density by utilizing the fast-switching capabilities and high thermal conductivity of WBG materials. Improved thermal stability, less heat generation, increased inverter efficiency, and smaller inductors, capacitors, and filters are all anticipated results. Furthermore, the study expects the inverter system to be more reliable and suitable for high-power and high-frequency applicat ions like electric vehicles and renewable energy systems.